Analysis of Pocket Double Gate Tunnel Fet for Low Stand by Power Logic Circuits

For low power circuits downscaling of MOSFET has a major issue of scaling of voltage which has ceased after 1V. This paper highlights comparative study and analysis of pocket double gate tunnel FET (DGTFET) with MOSFET for low standby power logic circuits. The leakage current of pocket DGTFET and MOSFET have been studied and the analysis results shows that the pocket DGTFET gives the lower leakage current than the MOSFET. Further a pocket DGTFET inverter circuit is design in 32 nm technology node at VDD =0.6 V. The pocket DGTFET inverter shows the significant improvement on the leakage power than multi-threshold CMOS (MTCMOS) inverter. The leakage power of pocket DGFET and MTCMOS inverter are 0.116 pW and 1.83 pW respectively. It is found that, the pocket DGTFET can replace the MOSFET for low standby power circuits.